Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology - ScienceDirect
What is the difference between Zener and snap-back behavior? - YouTube
Impact from IC On-Chip Protection Design on EOS | EOS/ESD Association, Inc.
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A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design<xref rid="cpb_27_8_088501_fn1" ref-type="fn">*</xref><fn id="cpb_27_8_088501_fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant ...
Figure 1 from Snapback Breakdown Dynamics and ESD Susceptibility of LDMOS | Semantic Scholar
Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology - ScienceDirect
반도체 공학 11-11 Snapback Breakdown - YouTube
PDF) Measurement on snapback holding voltage of high-voltage LDMOS for latch-up consideration | Ming-dou Ker - Academia.edu
Typical snapback curve of gate-source diode of InP HEMT with pulse... | Download Scientific Diagram
MODELING NMOS SNAPBACK CHARACTERISTIC USING PSPICE 1. Introduction 2. NMOS SNAPBACK
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NMOS and PMOS breakdown characteristics. | Download Scientific Diagram
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Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
parasitic BJT(기생 BJT; snapback, latch up) : 네이버 블로그
Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar
Figure 3 from Snapback Breakdown Dynamics and ESD Susceptibility of LDMOS | Semantic Scholar
TVS Diodes | mbedded.ninja
Micromachines | Free Full-Text | A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer
Junction temperature induced thermal snapback breakdown of MOSFET device | Semantic Scholar
Breakdown - Snapback Cap for Men | Billabong
parasitic BJT(기생 BJT; snapback, latch up) : 네이버 블로그
